METHOD OF SINGLE CRYSTAL GROWTH FOR SEMICONDUCTORS OF TYPE AB Russian patent published in 2008 - IPC C30B11/14 C30B29/40 

FIELD: metallurgy, crystal growth.

SUBSTANCE: invention refers to single crystals growth by the method of vertical directed crystallisation and can be used in single crystal growth technology for semiconductors with a purpose of producing bulk single crystals of a high grade of structure perfection. The method includes crystallisation of melt in a crucible on a inoculating crystal placed in the lower portion of the crucible and having an area of cross section much less than an area of the main section of the crucible. As an inoculating crystal a single crystal is used wherein lines of dislocation are situated predominantly at an angle of 45 degrees to vertical and more; further as an inoculating crystal there can be used a single crystal, containing an isovalent alloying additive with a concentration of above 10¹⁸ atom/cm³.

EFFECT: reduction in dislocation density in grown single crystals and correspondingly the result is upgraded quality of singly crystals of a large diameter.

2 cl, 3 ex, 1 dwg