DEVICE FOR GROWTH OF MONOCRYSTALS FROM MELT BY VERTICAL PULLING TECHNIQUE Russian patent published in 2014 - IPC C30B15/00 C30B15/14 

FIELD: metallurgy.

SUBSTANCE: device comprises chamber 1 to accommodate crucible 2 for melt, at least one main heater 4 for melting of initial material in crucible 2. There is an extra heater 9 arranged above the melt in the area of solid-melt interface and shaped to ring-like disc. Part-through radial cut-outs are made at inner and/or outer lateral sides of said disc. Besides, at least one heat-insulation shield 7 is arranged between lateral sides of the main heater 4 and chamber 1. Part-through radial cut-outs of inner and outer lateral sides of top heater 9 alternate so that radial cut-outs of one lateral side are located between radial cut-outs of the other lateral side.

EFFECT: ingots of increased diameter with smooth cylindrical surface, dislocation-free monocrystals with dislocation density of 200 cm^-2 suitable for production of solid-state, particularly, germanium plates of at least 100 mm diameter and at least 160 mcm depth.

9 cl, 4 dwg