DEVICE FOR SILICON SINGLE CRYSTALS GROWING BY CHOKHRALSKY METHOD Russian patent published in 2009 - IPC C30B15/14 C30B29/06 

FIELD: mechanics, technological processes.

SUBSTANCE: invention relates to semi-conducting material single crystals generation. According to the invention the device includes chamber 1 for single crystal growing. There is a pot 4 for melt production inside the above-mentioned device. The silicon single crystal melt extractor and shielding are also available in the above device. The shielding is in axial arrangement to the grown single crystal and represented as a doubled shield consisting of inner 12 and outer 13 shields. The outer shield is in the shape, which repeats or close to the shape of quartz pot. The inner shield is in the shape of tapered cone directed to the melt with its small bottom. The shielding is provided with the second cone shield 9, which is located inside the first shield and coaxial to it. The second cone shield is installed with a clearance to the first shield to ensure gas passing through the clearance to the chamber walls. The upper edge of the second cone shield is connected to the ring 10 contacting water-cooled growing chamber walls by means of a ring made from graphite cloth 11. The shield resembling pot shape is connected to the side cylindrical heat-insulating shield consisting of a pair of heat-insulating cylindrical shields 7 and 8, set of heat-insulating rings 15, 16, 17 and a set of removable rings 19.

EFFECT: structural improvement of grown dislocation-free silicon single crystals at reduced power consumption for their production.

5 cl, 1 dwg