FIELD: metallurgy, crystal growing.
SUBSTANCE: invention refers to growing mono-crystals out of melt in temperature gradient with implementation of device for melt and crystal transfer. The method includes heating of a crucible with a seed, melting charge and upper portion of the seed, and succeeded crystallisation by means of cooling in temperature gradient. Crystallisation is carried out with a heater in a pressure tight case "ОТФ"- heater immersed into melt and with a lattice with through apertures; the said lattice is assembled inside a sleeve installed in the crucible without a gap against its interior walls; also the sleeve is primarily arranged between the upper portion of the seed and "ОТФ"- heater, and further by means of the heater the sleeve is lowered till the lattice takes place of melted upper portion of the seed and till melt completely fills through apertures of the lattice along its whole height. The method is carried out in the device containing the crucible with melt and the seed arranged in its lower portion; the said device additionally contains "ОТФ"- heater in the pressure tight case immersed into melt and lattice with through apertures arranged inside the sleeve with horizontal grooves in its upper portion; also the sleeve is installed between the upper portion of the seed and "ОТФ"- heater without the gap between its side surface and interior surface of the crucible; "ОТФ"- heater is designed to travel down inside the crucible; while the crucible is placed on the bottom-support. Mono-crystals, while being crystallised from the seed crystal, grow inside cells with dimensions from 5 to 500 mcm. Thus the lattice for matrix detector is obtained, all cells of which are filled with mono-crystal material.
EFFECT: producing lattice for matrix detector all cells of which are filled with mono-crystal material.
3 cl, 3 ex, 1 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF GROWING MONOCRYSTALS-SCINTILLATORS BASED ON SODIUM IODIDE OR CAESIUM IODIDE AND DEVICE FOR IMPLEMENTING METHOD | 2006 |
|
RU2338815C2 |
| METHOD FOR GROWING GERMANIUM OR SILICON SINGLE CRYSTALS AND A DEVICE FOR ITS IMPLEMENTATION | 2022 |
|
RU2791643C1 |
| FACILITY FOR SINGLE CRYSTALS GROWING BY METHOD OF AXIAL HEAT CURRENT NEARBY SOLID-MELT INTERFACE | 2007 |
|
RU2357021C1 |
| METHOD FOR GROWING SINGLE CRYSTALS OF PROFILED RADIAL GERMANIUM | 2016 |
|
RU2631810C1 |
| PROCEDURE FOR GROWTH OF CdZnTe BY METHOD OF AHF (AXIAL HEAT FRONT), WHERE 0≤x≤1 OF DIAMETRE TO 150 mm | 2009 |
|
RU2434976C2 |
| METHOD FOR GROWING HIGH-TEMPERATURE MONOCRYSTALS BY SINELNIKOV-DZIOV'S METHOD | 2016 |
|
RU2626637C1 |
| PROCEDURE FOR GROWING CRYSTALS BY CRUCIBLE-LESS METHOD AND DEVICE FOR ITS IMPLEMENTATION | 2009 |
|
RU2426824C2 |
| CONTROL MODE OF CRYSTAL GROWTH PROCESS FROM MELT | 2007 |
|
RU2357023C1 |
| METHOD OF GROWING GERMANIUM MONOCRYSTALS WITH DIAMETRE OF UP TO 150 mm USING OTF METHOD | 2008 |
|
RU2381305C1 |
| METHOD OF GROWING PROFILED MONOCRYSTALS OF GERMANIUM FROM LIQUOR | 2012 |
|
RU2491375C1 |
