REACTOR FOR PLASMA-CHEMICAL ETCHING OF SEMICONDUCTOR STRUCTURES Russian patent published in 2019 - IPC H01L21/3065 

FIELD: microelectronics.

SUBSTANCE: invention relates to the field of microelectronics, in particular to reactors of high-density and high-frequency plasma processing, and can be used in the manufacture of semiconductor devices and integrated circuits. Essence of the invention lies in the fact that the reactor for plasma-chemical etching of semiconductor structures contains a transformer made in the form of an RF cable wound on ferrite rings, while the internal core of the RF cable is connected to the output of the RF generator on one side, on the other hand, it is connected to the first terminal of the spiral inductor, the first end of the RF cable sheath is connected to ground, and the second end of the RF cable sheath is connected to the second terminal of the spiral inductor.

EFFECT: increasing the efficiency transmitted from the RF-oscillator to the reactor.

3 cl, 1 dwg