FIELD: microelectronics. SUBSTANCE: in manufacturing semiconductor structures for functional microelectronics, integrated-circuit gas sensors with diaphragms as thin as 1-5 mcm, or diaphragms for X-ray photomasks, alkaline etchant is foamed prior to etching and foam produced in the process is used to treat underside of silicon plate using device that has etchant feeding system in the form of hollow tube carrying sprayer on one end; plate is fixed through rubber gasket to horizontal base. EFFECT: provision for eliminating hydrodynamic pressure of liquid on plate when silicon layer under thin diaphragm is fully removed. 2 cl, 2 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF MANUFACTURING CRYSTALS OF MICROELECTROMECHANICAL SYSTEMS | 2016 |
|
RU2625248C1 |
| METHOD OF MANUFACTURING SENSITIVE ELEMENTS OF GAS SENSORS | 2017 |
|
RU2650793C1 |
| METHOD FOR PROTECTING CORNERS OF THREE-DIMENSIONAL MICROMECHANICAL STRUCTURES ON SILICON WAFERS DURING DEEP ANISOTROPIC ETCHING | 2002 |
|
RU2220475C1 |
| PRESSURE TRANSDUCER | 1998 |
|
RU2134408C1 |
| METHOD FOR MANUFACTURING MULTIPURPOSE GAS COMPOSITION SENSORS | 2010 |
|
RU2449412C1 |
| METHOD OF MAKING SENSITIVE ELEMENTS OF GAS CONCENTRATION SENSORS | 2015 |
|
RU2597657C1 |
| METHOD FOR FORMATION OF SILICA AREAS IN SILICON PLATE | 2017 |
|
RU2672033C1 |
| SILICON MICRO-MECHANICAL STRUCTURES CORNERS PROTECTING METHOD DURING THE ANISOTROPIC ETCHING | 2017 |
|
RU2667327C1 |
| DEVICE FOR PLASMA PROCESSING OF SEMICONDUCTOR PLATE UNDERSIDE WITH FACE SIDE PROTECTED | 1991 |
|
RU2051442C1 |
| 0 |
|
SU1783595A1 |
