DEVICE FOR LOCAL PLASMA-CHEMICAL ETCHING OF SUBSTRATES Russian patent published in 2012 - IPC C23F1/08 H01L21/3065 H01J37/32 

FIELD: electricity.

SUBSTANCE: device comprises a vacuum chamber with a cover, two electrodes, systems for pumping and supply of an orifice gas, the upper electrode is installed on a plate and is equipped with a template installed on a detachable bushing fixed on the electrode, and a mechanism to control parallelism of two electrodes relative to each other, arranged in the form of three micrometric heads rigidly installed in holes of the specified plate as capable of interaction with their lower end via ball supports accordingly with three vertical stands fixed on the chamber base. On each stand there are movable supports interacting with a mechanism for control of a gap between two electrodes arranged in the form of a precision lift, where a lower electrode is installed, being a substrate holder.

EFFECT: device makes it possible to simplify the process of structures formation, to increase etching speed, ensures even etching due to application of a mask-free etching process and makes it possible to reduce power inputs and orifice gas flow rate.

4 dwg