REACTOR FOR PLASMA-CHEMICAL TREATMENT OF SEMICONDUCTOR STRUCTURES Russian patent published in 2021 - IPC H01L21/3065 

FIELD: microelectronics.

SUBSTANCE: invention relates to the field of microelectronics, in particular to high-density and high-frequency plasma processing reactors, and can be used in the production of semiconductor devices and integrated circuits. The reactor for plasma-chemical treatment of semiconductor structures contains a vacuum chamber 1 with a gas supply system 2 and a pumping system 3, a substrate holder 4 installed at the base of the chamber 1 and connected to an RF bias unit 5, a matching system consisting of a spiral inductor 6, a transformer 7 and a first capacitor 8, to connect the spiral inductor 6 with the RF generator 9, while a dielectric wall with a spiral inductor 6 is installed in the upper part of the vacuum chamber 1, the transformer 7 is made in the form of an RF cable 11 wound on ferrite rings 12, while the inner core 13 of the RF cable 11 is connected on one side to the output of the RF generator 9, on the other hand it is connected to the first output 14 of the spiral inductor 6, the first end of the braid 15 RF cable 11 is connected to the ground, and the second end of the braid 16 of the RF cable is connected to the second terminal 17 of the spiral inductor 6, the dielectric wall is made in the form of a cylinder 10, while the spiral inductor 6 is made in the form of the first section 18 and the second section 19 located on the outer surface cylinder 10.

EFFECT: invention provides faster and more stable plasma ignition, an increase in the etching rate and an increase in the functionality of the application.

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