OPTOELECTRONIC DEVICE FOR HIGH-SPEED DATA TRANSFER BASED ON SHIFT OF DISTRIBUTED BRAGG REFLECTOR STOP ZONE EDGE DUE TO ELECTROOPTIC EFFECT Russian patent published in 2012 - IPC H01S5/10 G02B5/28 H01L31/216 

FIELD: electricity.

SUBSTANCE: device includes at least one multilayer interference reflector and at least one resonator. In one version of the invention implementation the reflector works as a modulating element controlled by the voltage applied thereto. The stop zone edge is subjected to adjustment using electrooptic methods due to quantum-limited Stark effect in proximity to resonant mode which creates modulation of the reflector transmission factor thus entailing indirect modulation of light intensity. In another version of the invention implementation the optic field profile in the resonator represents the stop zone wavelength shift function, the device working as adjustable wavelength light radiator. In yet another version of the invention implementation at least two periodicities of refraction factor distribution are created in the reflector which enables suppression of parasitic optical modes and promotes high-speed direct modulation of intensity of light emitted by the device.

EFFECT: vertically integrated optoelectronic device serving for high-speed data transfer by way of direct or indirect modulation of emitted light intensity.

11 cl, 34 dwg