SEMICONDUCTOR OPTICAL ELEMENT AND ITS MANUFACTURING PROCESS; SEMICONDUCTOR OPTICAL ELEMENT BASED ON GROUP II OXIDE ELEMENT AND ITS MANUFACTURING PROCESS Russian patent published in 2001 - IPC

Abstract RU 2169413 C2

FIELD: light-emitting, lasing, and color-display elements. SUBSTANCE: thin film of ZnO is produced on sapphire substrate surface due to using laser molecular-beam epitaxy method. Semiconductor optical element based on group II element oxide uses thin film of zinc oxide incorporating magnesium or cadmium in solid solution condition. Adding magnesium or cadmium provides for varying forbidden gap width between 3 and 4 eV. EFFECT: reduced lasing threshold, wavelength of emitted light, and loss. 8 cl, 32 dwg, 1 tbl

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RU 2 169 413 C2

Authors

Masasi Kavasaki

Khideomi Koinuma

Akira Okhtomo

Jusaburo Segava

Takasi Jasuda

Dates

2001-06-20—Published

1998-03-05—Filed