ACTIVE ELEMENT OF SEMICONDUCTOR LASER WITH TRANSVERSE PUMPING BY ELECTRON BEAM Russian patent published in 2017 - IPC H01S5/34 H01S5/10 

FIELD: laser engineering.

SUBSTANCE: active element of semiconductor laser with transverse pumping by electron beam comprises rectangular plate from semiconductor material, having first surface, irradiated with electrons, second surface parallel to first, by which it is fixed on substrate, and two side surfaces, forming optical resonator. Plate is multilayer semiconductor heterostructure, having wave-guiding layer, located next to first surface, and passive wave-guiding layer with low coefficient of absorption of radiation generated in optical resonator, arranged between active wave-guiding layer and substrate, wherein passive wave-guiding layer has optical connection with active wave-guiding layer.

EFFECT: technical result consists in increasing of radiation output power with pumping electrons energy reduction.

6 cl, 3 dwg