PROCESS OF MANUFACTURE OF LAYERS OF AMORPHOUS GERMANIUM Russian patent published in 1996 - IPC

FIELD: manufacture of semiconductor materials. SUBSTANCE: process is related to manufacture of integrated circuits and photodetection devices. Process involves deposition of layers of amorphous germanium on substrate located in zone of precipitation of reactor by way of thermal decomposition of monogermanium. Process is conducted at temperature 160-290 C, pressure 660-5300 Pa in isothermal reactor with ratio of summary surface of precipitation zone to volume of reactor equal to 1.1-2.2 cm^-1. Internal surface of reactor is manufactured from steel, quartz or glass coated with magnesium oxide. EFFECT: facilitated manufacture. 1 tbl