METHOD OF MANUFACTURE OF LAYERS OF SILICON DIOXIDE Russian patent published in 1995 - IPC

Abstract RU 2029412 C1

FIELD: semiconductor device. SUBSTANCE: method includes precipitation of layer from homogeneous gas mixture of monosilane, trithylphosphate and argon or of tetraethyoxysilane and oxygen. EFFECT: enhanced stability of operational characteristics. 3 cl, 1 dwg

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RU 2 029 412 C1

Authors

Bolotin V.P.

Mikhajlovskij I.P.

Cherepov E.I.

Dates

1995-02-20—Published

1992-05-08—Filed