PROCESS OF MANUFACTURE OF PROTECTIVE LAYER FOR ALUMINIUM COAT Russian patent published in 1995 - IPC

Abstract RU 2034366 C1

FIELD: manufacture of integrated circuits. SUBSTANCE: process includes deposition of film of silicon nitride under conditions of HF discharge at room temperature. EFFECT: prevention of growth of tongues.

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RU 2 034 366 C1

Authors

Rubtsov N.M.

Slavin M.B.

Nagornyj S.S.

Dates

1995-04-30—Published

1991-04-04—Filed