SEMICONDUCTOR SPARK PLUG Russian patent published in 1996 - IPC

FIELD: ignition of fuel mix in combustion chamber. SUBSTANCE: device has housing, outer electrode, insulator with semiconductor coating and central electrode. All electrodes are mounted with spark gap on surface of insulator with semiconductor coating. Surface of said insulator is located below with respect to outer face surface of electrodes by thickness of outer electrode. Outer electrode has at least two through radial slots between ring spark gap and side surface of housing. Size of slots runs to surface of semiconductor coating of insulator. EFFECT: increased service life, increased ignition capacity. 1 dwg