THERMISTOR MANUFACTURING PROCESS Russian patent published in 1996 - IPC

Abstract RU 2064700 C1

FIELD: electronic engineering; film thermistors. SUBSTANCE: method involves forming semiconductor material blank with organic binder by slip casting in the form of wet film, and dividing the latter into rectangular plates. Then they are annealed. Electrodes are applied to short or long edges of plates depending on desired rated resistance. EFFECT: reduced labour consumption, improved specifications of thermistor. 1 tbl

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RU 2 064 700 C1

Authors

Semetskaja Natalija Mikhajlovna

Semetsij Igor' Mikhajlovich

Dates

1996-07-27Published

1993-06-15Filed