METHOD FOR PRODUCING CURRENT-CONDUCTING FILM ON SILICA-CONTAINING SUBSTRATE Russian patent published in 2001 - IPC

FIELD: electronic engineering; current-conducting films for resistive film heaters. SUBSTANCE: compound has in its composition 0.5-22.0 mole percent of alkali metal salts of weak oxygen-containing acid ((Na₂SiO₃, K₂SiO₃, Na₂Cr₂O₇, and the like) or their mixture and 78.0-99.5 mole percent of aluminum powder. Mixture of aluminum powders and salt (salts) applied to silica-containing ceramic or glassceramic substrate is subjected to high-temperature annealing to form solid current-conducting film layer. EFFECT: improved physical and mechanical properties of film for wide channels of silica substrates. 1 tbl