FIELD: electrical engineering.
SUBSTANCE: invention relates to electrical engineering, namely to a method for manufacturing thin-film platinum thermistors on dielectric substrates and a thin-film thermistor device that can be used in the manufacture of discrete temperature level meters. On the surface of the mask from a composite sacrificial layer of aluminum and photoresist, an adhesive sublayer of titanium and a base layer of platinum are sequentially sprayed in vacuum, after which the sacrificial layer is removed by etching, and annealing of the dielectric substrate with thermistor film elements is carried out at a temperature of 400-450 ° C in an air atmosphere. At the same time, at least one meander of the film resistor, its contact pads with wedges are made of a layer of platinum with a thickness of 0.2-2.0 microns, and an adhesive layer of titanium with a thickness of 0.01-0.02 microns is used as an adhesive sublayer between the dielectric substrate and the platinum layer.
EFFECT: invention increases the reliability and stability of thermistors by reducing the spread of nominal resistance values, as well as increasing the accuracy of manufacturing the geometric dimensions of film elements is the technical result of the invention.
10 cl, 16 dwg, 2 tbl
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Authors
Dates
2023-03-02—Published
2022-03-29—Filed