GAS LASER Russian patent published in 1996 - IPC

FIELD: quantum electronics. SUBSTANCE: device has pulse power supply, first to k-th current conductors, which run through dielectric flange of laser chamber, in which initial ionization unit, long anode and cathode are located. Outer surface of flange has cavity where first to n-th capacitors are located. Outer terminal of each current conductor is located in plane of dielectric flange. Axis of each current conductor and axis of each capacitor, which runs through its terminals, are perpendicular to plane which includes longitudinal axes of anode and cathode. Anode is connected to pulse power supply through initial ionization unit and it is connected to first to k-th current conductors directly. In addition support members are located on outer surface of dielectric flange. Said dielectric flange may contain first to l stiffening ribs, which are located in cavity which is made on its surface. EFFECT: decreased inductance of discharge circuit, increased generation power and increased average output power of laser emission. 2 cl, 2 dwg