FIELD: superconductor microelectronics; producing thin-film semiconductor structures. SUBSTANCE: high-melting metal layer is deposited on substrate, photoresist mask is formed, buffer oxide layer is produced by anodizing high-melting metal layer followed by low- temperature annealing in inert environment, thin film of high-temperature superconductor is deposited and subjected to high-temperature annealing in oxygen environment; in the process, high-melting metal layer is oxidized and then removed by dry air jet; used as high-melting metal is zirconium. EFFECT: facilitated procedure. 4 dwg
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