FIELD: cryoelectronics; production of thick-film structures around high-temperature superconductors and elements using high-temperature superconductor effect.
SUBSTANCE: proposed method for producing thick-film structure around high-temperature superconductor includes substrate covering with Bi2O3 intermediate layer to improve quality characteristics of thick-film high-temperature superconductor structure, drying, and heat treatment. Heat-treatment temperature complies with Bi2O3 melting point and amounts to 825 °C. Heat treatment time for Bi2O3 intermediate layer is 5 - 6 minutes. Then layer of high-temperature superconductor of Bi-Sr-Ca-Cu-O bismuth system is applied, dried, and annealed for finally attaining desired crystalline structure and superconducting properties.
EFFECT: enhanced reliability of film adhesion to substrate without losing its superconductor properties; improved quality characteristics of structure due to introduction of mentioned intermediate layer.
1 cl, 1 dwg
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