PROCESS OF FORMATION OF BUFFER LAYERS OF ZIRCONIUM DIOXIDE Russian patent published in 1995 - IPC

FIELD: electronics. SUBSTANCE: buffer layers of zirconium dioxide are formed by application of alcohol solution of zirconium organic composition on surface of semiconductor substrate and thermal treatment. To increase degree of texturing of cubic phase and to expand range of materials used for substrates alcohol solution of zirconium organic composition prepared with proportion: alcohol-main alcohol solution of zirconium organic composition (5: 1)-(10-1) parts by mass is first applied on surface of substrate before application of main alcohol solution of zirconium organic composition, then substrate is treated thermally under same conditions as it was treated after application of main alcohol solution. EFFECT: increased degree of texturing, expanded range of materials used for substrates.