METHOD FOR PRODUCING THIN INSULATING SUBSTRATES Russian patent published in 1997 - IPC

Abstract RU 2071645 C1

FIELD: microelectronics. SUBSTANCE: aluminium substrate is electrochemically anodized, thermally treated, and upon repeated heat treatment at 550 C, two thin insulating substrates are separated. EFFECT: facilitated procedure. 5 dwg

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RU 2 071 645 C1

Authors

Danilov A.V.

Danilova N.F.

Dates

1997-01-10Published

1992-12-09Filed