FIELD: fabrication of microelectronic equipment, in particular, fabrication of hybrid integrated circuits on different substrates. SUBSTANCE: interlayer insulating layers on the substrate are obtained by application of polymeric material at centrifuging; they are formed with the aid of a mask, having ports. The mask is secured on the substrate surface by a magnetic field. Centrifuging is performed at a speed of 1500 rpm. Polymeric material is applied at substrate heating to the polymerization temperature with subsequent cooling. The mask is made of material with a temperature coefficient of linear expansion exceeding that of the substrate material by 2 to 6 times. EFFECT: enhanced adaptability to manufacture and reduced labour content. 4 dwg
