METHOD OF SILICON CARBIDE PRODUCING Russian patent published in 1997 - IPC

Abstract RU 2071938 C1

FIELD: inorganic chemistry, semiconductors. SUBSTANCE: 0.242 kg dried ammonia is fed to reactor for treatment of 1 kg silicon tetrafluoride at 1500 C. 1 kg of the obtained silicon nitride is treated with 0.28 kg graphite at 1800 C. Impurity content in silicon carbide does not exceed 10^-6-10^-7 wt. -%. Silicon carbide is used for semiconducting material making. EFFECT: improved method of producing, enhanced quality.

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RU 2 071 938 C1

Authors

Karelin V.A.

Karelin A.I.

Shpunt L.B.

Volk V.I.

Dates

1997-01-20—Published

1993-02-03—Filed