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2 072 005

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C1

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IPC

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Application

93028172/26, 1993-05-25

(22)

Actual filing date

1993-05-25

(45)

Published

1997-01-20

(72)

Inventor

Kostishin V.G.Chukov I.I.Letjuk L.M.

(73)

Holder

Moskovskij Institut Stali I Splavov

MATERIAL RESISTANT TO GAMMA-QUANTS Russian patent published in 1997 - IPC

Abstract RU 2072005 C1

FIELD: magnetic microelectronics and radiation physics. SUBSTANCE: as material for manufacturing memory and logical elements on cylindrical magnetic domains operating under intensive gamma-irradiation, epitaxial films of ferrites-garnets (Ca, Ge) are used, said films being grown up on γ substrate by the aid of liquid-phase epitaxy technique from stoichiometric solution-melt based on lead oxide-boron oxide. EFFECT: improved procedure. 2 dwg, 4 tbl

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RU 2 072 005 C1

Authors

Kostishin V.G.

Chukov I.I.

Letjuk L.M.

Dates

1997-01-20—Published

1993-05-25—Filed

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