FIELD: magnetic microelectronics. SUBSTANCE: method used for processing single-crystalline epitaxial Bi- and Ga-containing ferrite- garnet films and devices built around them involves irradiation of spatial- light modulators with fast electrons of energy Ee= (4÷7) MeV at flux density ϕe= (2÷6)•1012 cm-2s-1 up to fluency Φe= (1÷5)•1016 cm-2, irradiation being conducted throughout entire modulator surface and on its non-effective side; then they are annealed in oxygen environment at 150-300 C for 1-2 h. EFFECT: reduced spread of cell change-over threshold fields and increased speed of magnetrons. 2 dwg, 3 ex
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Authors
Dates
2000-06-10—Published
1999-04-22—Filed