FIELD: apparatuses for topological pattern formation of thin films. SUBSTANCE: apparatus for topological pattern formation of thin films applied in vacuum on dielectric substrate has metal mask of ferromagnetic material located on front side of substrate and magnet located on opposite in respect to mask side of substrate. Between plane of magnet and substrate there is gasket of diamagnetic material. As magnet flat magnet with alternating poles made in the form of stripes is used. In the case thickness of diamagnetic gasket does not exceed half-width of magnet stripe. EFFECT: improved process. 1 dwg
