HYBRID INTEGRATED CIRCUIT MANUFACTURING PROCESS Russian patent published in 1997 - IPC

FIELD: microelectronics. SUBSTANCE: first-level conductors and contact pads are formed on insulating substrate surface and contact pads are run over with tin or solder. Then fouled polyimide layer is applied to first-level circuit pattern and holes are made on polyimide side at point of location of contact pads; second-level conductors and contact pads are made of foil. Second-level contact pads are also run over with tin whereupon first- and second-level contact pads are welded together. After that, pattern of second-level contact pads made of aluminium with nickel and copper sublayer is formed on temporary base, and contact pads made on temporary base are connected to second-level contact pads, then temporary base is removed. Interlayer connections are provided by soldering and while connecting first- and second-level contact pads, aluminium-foiled polyimide layer with chromium and copper sublayers is applied to surface of second-level contact pads; then polyimide is removed. EFFECT: provision for simultaneous mounting of electronic and radio components on surfaces of multilevel hybrid integrated circuit both by soldering and welding. 3 cl, 14 dwg