METHOD FOR MAKING RELIEF PATTERNS IN DIELECTRIC SUBSTRATES Russian patent published in 1997 - IPC

Abstract RU 2079865 C1

FIELD: microelectronics; patterning in dielectric and piezoelectric substrates in fabricating waveguides, micromechanical devices, quartz resonators, etc. SUBSTANCE: a dielectric film is applied onto a substrate and made into a protective mask configuration. Then the substrate is etched. Neodymium monoaluminate film with a thickness of no less than 1 mcm is used as a material for the mask. EFFECT: facilitated procedure.

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RU 2 079 865 C1

Authors

Korzh I.A.

Dates

1997-05-20Published

1994-05-11Filed