METHOD OF PRODUCING RELIEF IN DIELECTRIC SUBSTRATE Russian patent published in 2019 - IPC H01L21/308 

FIELD: instrument engineering.

SUBSTANCE: invention relates to instrument making and can be used to produce relief in dielectric substrates, particularly quartz ones, in making micromechanical devices. In the method of producing a relief in a dielectric substrate, comprising depositing on the substrate a protective mask with a layer thickness of not less than 1 mcm, obtained by sputtering in a vacuum, forming a protective mask configuration, etching the substrate and removing the protective mask, sputtering and forming the configuration of the protective mask on both sides, and etching the substrate isotropically, also from two sides, wherein the mask is a layer of polycrystalline silicon.

EFFECT: technical result is improved manufacturability of quartz dielectric substrates due to shorter time for performing process operations and higher percentage yield.

1 cl, 4 dwg