FIELD: microelectronics; manufacture of micromechanical devices, crystal resonators, and the like.
SUBSTANCE: proposed method for producing embossed surface on dielectric and piezoelectric substrates incorporating silicon dioxide in their composition includes application of shielding mask in the form of multilayer thin-film system of two materials onto its surface and formation of shielding mask configuration, substrate etching, and removal of shielding mask; used as shielding mask is multilayer thin-film system of yttrium- yttrium oxide obtained by evaporation in vacuum, yttrium layer thickness being minimum 1 μm and yttrium oxide thickness, minimum 0.05 μm. Intermediate layer of mixture of these materials can be formed between yttrium layer and yttrium-oxide layer.
EFFECT: enhanced yield due to eliminating voids and interruptions in shielding layer, reduced cost of end product.
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