FIELD: microelectronics. SUBSTANCE: process involves deposition of metal film and formation of protective mask, etching of substrate and removal of protective mask. Two- layer of yttrium-copper alloy are used as mask material. Lower yttrium layer has 0.1 μm thickness, copper layer is not less than 1.0 μm thick. Transition layer of mixture of these metals is formed between main layers. EFFECT: facilitated manufacture, enhanced operational properties. 2 cl
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