DEVICE FOR DETECTION OF ELECTRIC CHARACTERISTICS OF SEMICONDUCTOR PLATES Russian patent published in 1997 - IPC

Abstract RU 2080689 C1

FIELD: microelectronics. SUBSTANCE: device has two sources of modulated light, optical communication elements, photodetector, focusing element, stage, detector of photo electromotive force with capacitance electrode and preliminary amplifier, two power amplifiers, two-channel generator, two recording units. In addition device may have two synchronous detectors, differential amplifier, source of non-modulated light for illumination of tested objects. In addition device has additional light sources and electronic units. Lasers or light-emitting diodes may be used as light sources. EFFECT: increased functional capabilities. 7 cl, 4 dwg

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RU 2 080 689 C1

Authors

Fajfer V.N.

Petrosjan E.R.

Djukov V.G.

Pravdivtsev A.E.

Jakushin V.K.

Dates

1997-05-27Published

1994-07-28Filed