PROCESS AND DEVICE TO TEST SEMICONDUCTOR STRUCTURE Russian patent published in 1999 - IPC

FIELD: nondestructive methods of test of semiconductor structures without formation of contacts. SUBSTANCE: sample is irradiated with pulse flux of optical radiation. Induced photoelectromotive force is measured under condition of potential contrast with linearizing, energy and current of electron probe, intensity of radiation pulses, their duration, pulse repetition frequency and level of constant illumination are measured till values of photoelectromotive force enter working region. Images are recorded. Stroboscopic analysis of pulses of photoelectromotive force is conducted by control over analyzer of energy of secondary electrons and measurements are taken. Analyzer is inclined with reference to axes of electron probe and detector of secondary electrons. It has two conical electrodes forming immersion objective and controlling electrode-diaphragm. EFFECT: enhanced accuracy and speed of test with simultaneous increase of number of determined parameters. 2 cl, 2 dwg