SILICON POURING INGOT MOLD Russian patent published in 1997 - IPC

FIELD: metallurgy, in particular, thermoelectric production of crystalline silicon. SUBSTANCE: ingot mold has metal housing with peripheral stepped lining extending on longitudinal sides of ingot mold from bottom to top of longitudinal walls. Lining is made from material having low silicon melt wettability and providing high chemical resistance of this part of lining. Additional stepped metal walls are mounted within metal housing to define closed spaces between metal walls and metal housing. These walls are adapted to carry peripheral lining masonry. Closed spaces are filled with powdered heat-insulating material, such as diatomite, pearlite etc. Stepped peripheral lining is fabricated from fireclay brick impregnated with compound containing, % by weight: coal dust 5-15; ground silicon 10-30; binder, such as chromo-aluminaphosphate binder. Service life of ingot mold is increased by 1.2 times. Specific consumption of coal product is reduced by 50%. EFFECT: increased efficiency, prolonged service life and improved quality of silicon. 9 cl, 1 dwg, 1 tbl