SILICON INGOT MANUFACTURE METHOD Russian patent published in 1997 - IPC

FIELD: metallurgy, in particular, electrothermal production of crystalline silicon. SUBSTANCE: method involves periodically applying oxygen-containing boron compound to bottom having temperature exceeding melting temperature of this compound, for instance boric anhydride, boric acid or borax, by 50-250 C, with amount of oxygen-containing boron compound being within the range of 0.5-5 kg per sq m of bottom area; delivering silicon fines onto bottom. EFFECT: increased efficiency by improved continuity of lining and prolonged service life due to preventing ingot from welding to bottom surface and oxidation of bottom surface at high temperatures. 6 cl, 1 tbl