HIGH-VOLTAGE SEMICONDUCTOR VALVE Russian patent published in 2004 - IPC

FIELD: power and electrical engineering, electrified transport, electric drives including high-voltage ones.

SUBSTANCE: controlled semiconductor power converters (SPC) are connected in series; SPCs and relevant resistors and capacitors form cells paired in 2n physically identical modules so that first SPC is electrically connected inside each module to resistor through anode and second one, through cathode; inserted between modules in single pile are insulating gaskets; cathode of second SPC of any module is electrically connected to anode of first SPC of next module through short flexible external conducting bus, and bolted joints of capacitor leads are secured directly to external buses of cell; in addition two insulating gaskets are inserted in center of pile between n and (n + 1) modules with diode assembly of one or more pill-type diodes inserted between these gaskets so that one end of diode assembly is connected through short flexible conducting bus to cathode of second SPC of n module while other lead is loose. For further reduction of flux density height of damping-circuit capacitors is chosen to equal that of single semiconductor cell of pile.

EFFECT: eliminated overvoltages.

2 cl, 2 dwg