FIELD: local autonomous light sources. SUBSTANCE: device has metal housing which has window and is filled with gas tritium under pressure which is greater than air. Chamber bottom is covered with luminophore layer which contains ZnS : Cu. Additional luminophore layer is provided on inner surface of window. Mirror conic reflector is located in opposite to window. length of reflector at least 2.5 diameters, generatrix is located at angle of 18-20 degrees with respect to chamber axis. Said chamber has cylindrical shape; ratio of its diameter to height is in range of 8-12. Ratio of size of particles and surface density of luminophore on chamber bottom and on hole is in range of 3-6 and 22-28 respectively. EFFECT: increased output light. 1 dwg, 11 tbl
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| METHOD FOR PRODUCTION OF HIGH-PURITY POLYCRYSTALLINE SILICON | 1993 |
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