LUMINESCENT LIGHT SOURCE Russian patent published in 1997 - IPC

Abstract RU 2087992 C1

FIELD: local autonomous light sources. SUBSTANCE: device has metal housing which has window and is filled with gas tritium under pressure which is greater than air. Chamber bottom is covered with luminophore layer which contains ZnS : Cu. Additional luminophore layer is provided on inner surface of window. Mirror conic reflector is located in opposite to window. length of reflector at least 2.5 diameters, generatrix is located at angle of 18-20 degrees with respect to chamber axis. Said chamber has cylindrical shape; ratio of its diameter to height is in range of 8-12. Ratio of size of particles and surface density of luminophore on chamber bottom and on hole is in range of 3-6 and 22-28 respectively. EFFECT: increased output light. 1 dwg, 11 tbl

Similar patents RU2087992C1

Title Year Author Number
PROCESS OF APPLICATION OF LUMINOPHOR COAT ON INTERNAL SURFACE OF TRITIUM RADIOLUMINESCENT SOURCE OF LIGHT 1991
  • Kavetskij A.G.
  • Shikharev V.A.
  • Okaminov V.M.
RU2030012C1
LIGHT-EMITTING DIODE SOURCE OF WHITE LIGHT HAVING REMOTE REFLECTING MULTILAYER PHOTOLUMINESCENT CONVERTER 2011
  • Zheljabovskaja Nina Matveevna
  • Soshchin Naum Pinkhasovich
  • Ulasjuk Vladimir Nikolaevich
RU2475887C1
LIGHT DIODE SOURCE OF WHITE LIGHT WITH COMBINED REMOTE PHOTOLUMINISCENT CONVERTER 2011
  • Dejnego Vitalij Nikolaevich
  • Soshchin Naum Pinkhasovich
  • Ulasjuk Vladimir Nikolaevich
RU2502917C2
METHOD FOR COUNTING TRACKS OF ALPHA-PARTICLES IN NITROCELLULOSE DETECTOR 1994
  • Kopchenov V.E.
RU2082183C1
METHOD OF MAKING ZINC SULPHIDE ELECTROLUMINESCENT MATERIAL 2007
  • Sychev Maksim Maksimovich
  • Bakhmet'Ev Vadim Vladimirovich
  • Komarov Evgenij Valerievich
  • Mjakin Sergej Vladimirovich
  • Vasil'Eva Inna Vasilievna
  • Korsakov Vladimir Georgievich
RU2390534C2
INDEX SIGN AND ITS MANUFACTURING PROCESS 1996
  • Belkin N.D.
  • Molokhina L.A.
  • Filin S.A.
  • Shilokhvost Ju.P.
  • Shubin N.E.
  • Katov M.V.
  • Vorob'Ev V.N.
  • Kozhanov V.I.
RU2118851C1
METHOD FOR PRODUCTION OF HIGH-PURITY POLYCRYSTALLINE SILICON 1993
  • Karelin V.A.
RU2078034C1
METHOD FOR SOLIDIFYING CONCENTRATE OF TRANSPLUTONIUM OR TRANSPLUTONIUM AND RARE-EARTH ELEMENTS IN CERAMICS 1995
  • Strel'Nikov A.V.
  • Sokolov V.I.
  • Starchenko V.A.
RU2098874C1
METHOD OF TESTING ELECTROLUMINOPHOR FOR STABILITY 0
  • Kovalev Boris Alekseevich
SU1770856A1
METHOD OF HARDENING OF CONCENTRATE OF TRANSPLUTONIUM OR TRANSPLUTONIUM AND RARE-EARTH ELEMENTS TO FORM CERMET 1998
  • Strel'Nikov A.V.
  • Sokolov V.I.
  • Starchenko V.A.
RU2138866C1

RU 2 087 992 C1

Authors

Mikhal'Chenko A.G.

Shikharev V.A.

Rubinov V.A.

Okaminov V.M.

Meleshkov S.P.

Dates

1997-08-20Published

1990-07-18Filed