FACILITY FOR SINGLE CRYSTALS GROWING BY METHOD OF AXIAL HEAT CURRENT NEARBY SOLID-MELT INTERFACE Russian patent published in 2009 - IPC C30B11/00 C30B13/18 

FIELD: metallurgy, crystals.

SUBSTANCE: invention relates to single crystal growing process from the melt in temperature gradient with usage of heating element, immersed into the molten zone. Facility for single crystal growing by method of axial heat current nearby solid-melt interface includes water-cooled chamber with bottom 1 and top 2 flanges, furnace with combination background heater 4 and building insulation 3, mold, consisting of capsule 5 with cover, immersed into heater capsule in hermetic enclosure - solid-melt heater 10, consisting of thermopair 11, and support 8 under the capsule 5, fixed on water-cooled rod 9 and consisting thermopairs 12, 14, facility for fixing of solid-melt heater in the top chamber flange, additionally background heater consists of at least of two sections I and II, allowing common withdrawal for voltage supplying, and solid-melt heater is located by height facility in the limit of top sections II higher the level, corresponding the location of mentioned common withdrawal in the chamber, for value h, equal to 5-30 mm depending on layer thickness of melt above the crystal, at which it is implemented crystallisation. Facility structure provides creation of axial temperature gradient in value wide range and high symmetry of thermal field. Implemented in growing crystal and in melt nearby it closed to one-dimensional temperature field, which provides, in essence, flat shape of solid-melt interface almost all over the section of crystal.

EFFECT: receiving of more peer single crystals with less amount of defects, connected to thermotension in single crystal during crystallisation and cooling-down, and increasing of yield.

17 cl, 6 dwg