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2 091 501

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C1

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IPC

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Application

4930089/02, 1991-04-22

(22)

Actual filing date

1991-04-22

(45)

Published

1997-09-27

(72)

Inventor

Sil'Nikov V.N.Zhelobova E.P.Belichko M.T.Simchenko N.V.Sil'Nikova E.F.Kejzmov Eh.S.Bakharev Ju.V.Beljakov Ju.I.Khrustalev V.A.Pendjurin V.A.

(73)

Holder

Aktsionernoe Obshchestvo Otkrytogo Tipa Aljuminievo-Magnievyj Institut"

METHOD OF MANUFACTURING TARGET FOR MAGNETRON SPRAYING FROM SPECIAL- PURITY ALUMINIUM Russian patent published in 1997 - IPC

Abstract RU 2091501 C1

FIELD: microelectronics. SUBSTANCE: in a method of manufacturing special-purity aluminium target involving press forming, target is cooled, e.g. in liquid nitrogen with temperature gradient at least 100 C/cm, and baked at 450-640 C. What is claimed is that, in the process of cooling target, uneven temperature deformations first occur in target structure leading to stresses which manifest themselves in baking process facilitating recrystallization and thus stabilization of structure. EFFECT: improved performance characteristics due to stabilized structure. 2 tbl

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RU 2 091 501 C1

Authors

Sil'Nikov V.N.

Zhelobova E.P.

Belichko M.T.

Simchenko N.V.

Sil'Nikova E.F.

Kejzmov Eh.S.

Bakharev Ju.V.

Beljakov Ju.I.

Khrustalev V.A.

Pendjurin V.A.

Dates

1997-09-27—Published

1991-04-22—Filed

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