METHOD FOR PRODUCTION OF NITRIDE LIGHT-EMITTING DIODE Russian patent published in 2019 - IPC H01L33/32 

FIELD: lighting engineering.

SUBSTANCE: method of producing a nitride light-emitting diode involves successive formation on a dielectric substrate of a nitride semiconductor layer of n-type conductivity, an active layer of a nitride semiconductor, a layer of a nitride semiconductor of p-type conductivity. On the obtained heterostructure, a first transparent electroconductive layer ITO with thickness of 70–300 nm is formed by electron-beam evaporation at substrate temperature (15–75) °C with intermediate annealing in gas atmosphere at pressure close to atmospheric pressure. On the first transparent electroconductive layer ITO, an additional transparent electroconductive layer ITO with thickness of (100–300) nm is formed by electron-beam evaporation at substrate temperature (400–500) °C, on which is formed second transparent electroconductive layer of ITO with thickness of (30–200) nm by magnetron sputtering without substrate heating. Obtained structure is annealed in gas atmosphere at pressure close to atmospheric pressure. Metal contacts are applied respectively on the second transparent electroconductive layer ITO and on layer of nitride semiconductor of n-type of conductivity.

EFFECT: method according to the invention enables to obtain light-emitting diodes with high quantum output without detriment to operating characteristics thereof by obtaining contact layers to the GaN surface of p-type conductivity, having simultaneously high electrical conductivity and high transmission coefficient of radiation.

1 cl, 1 dwg