MULTISCAN MANUFACTURING PROCESS Russian patent published in 1997 - IPC

FIELD: semiconductor engineering; manufacture of coordinate-sensing multiscan photodetector used for determining light signal position. SUBSTANCE: method involves formation of two isolated base regions on substrate, manufacture of strip of differentially connected p-n junctions of mentioned regions, formation of common bus along external edge of one base region, and deposition of separation layer on external edge of other base region. Novelty is that separation layer surface is covered, in addition, with resistive layer protruding beyond separation layer on its external side relative to p-n junctions by at least ΔM_min,, where ΔM_min= Δm·f*max

/f_min, its resistance being at least K times higher than that of separation layer, where k=m/M·1_min; then positioning error dependence f(x) is determined by measuring output voltage as function of light spot center position, maximum positioning error f_max is found, separation layer resistance is corrected by varying width of additional resistive layer on its external side relative to p-n junctions according to equation m(x)=M[1+R_m/ R_d·(f(x)-f_max)], where m(x) is corrected distribution of additional resistive layer width, mcm; R_m is resistance of additional resistive layer, Ohm; R_d is separation layer resistance, Ohm; Δm is minimum desired value of additional resistive layer width variation, mcm; f(x) is positioning error as function of light spot center position, %; f_max is maximum measured positioning error, %; f*max is maximum possible desired positioning error, %; f_min is preset positioning error, %; M is width of additional resistive layer, mcm; D is width of separation layer, mcm. EFFECT: facilitated procedure. 1 dwg