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2 094 549

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IPC

(21) (22)

Application

93036470/25, 1996-07-13

(22)

Actual filing date

1996-07-13

(45)

Published

1997-10-27

(72)

Inventor

Shimanskij A.F.Krasnova E.V.Kargin V.F.Tupaev V.M.Leonov V.V.

(73)

Holder

Krasnojarskij Institut Tsvetnykh Metallov

METHOD FOR HEAT TREATMENT OF HIGHLY ALLOYED MONOCRYSTALS OF SILICIUM Russian patent published in 1997 - IPC

Abstract RU 2094549 C1

FIELD: metallurgy, namely, technology of semiconductor materials, preferably for production of highly alloyed monocrystals of silicium having reproducible electrophysical characteristics. SUBSTANCE: method involves multiple heating to (1470 ± 50) K and cooling to (770 ± 50) K which are carried out 4-5 times. EFFECT: decreased duration of heat treatment. 1 tbl

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RU 2 094 549 C1

Authors

Shimanskij A.F.

Krasnova E.V.

Kargin V.F.

Tupaev V.M.

Leonov V.V.

Dates

1997-10-27—Published

1996-07-13—Filed

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