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(19)

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2 344 209

(13)

(51)

IPC

C30B31/20(2006-01-01)

C30B33/02(2006-01-01)

C30B29/40(2006-01-01)

(21) (22)

Application

2006140663/15, 2006-11-17

(24)

Start date

2006-11-17

(22)

Actual filing date

2006-11-17

(45)

Published

2009-01-20

(72)

Inventor

Kolin Nikolaj GeorgievichMerkurisov Denis IgorevichBojko Vladimir Mikhajlovich

(73)

Holder

Federal'Noe Gosudarstvennoe Unitarnoe Predprijatie Fiziko-Khimicheskij Institut Im. L.Ja. Karpova"

METHOD OF PRODUCING MONO-CRYSTALS OF INDIUM ANTIMONIDE ALLOYED WITH TIN Russian patent published in 2009 - IPC C30B31/20 C30B33/02 C30B29/40

Abstract RU 2344209 C2

FIELD: metallurgy, crystal growing.

SUBSTANCE: invention refers to process of production of A^IIIB^Vsemi-conducting compositions. Mono-crystals of indium antimonide alloyed with tin are produced by means of bombardment with a full specter of reactor neutrons with successive heating, annealing and cooling. Heating is carried out at the rate of 20÷40 deg/min to temperature of annealing, defined by the formula T_anneal=450+(tgN_sn-14)-7 [°C], where N_sn is concentration of introduced alloying addition of tin [cm^-3]; annealing is performed during 20 minutes, while the successive cooling is carried out at the rate of 5-10 deg/min to the temperature of 350÷400°C, and further at the rate of 20-40 deg/min to an ambient temperature.

EFFECT: alloying of indium antimonide plates with tin to high concentrations, also upgraded uniformity of tin distribution and electrone mobility.

2 ex, 1 tbl

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RU 2 344 209 C2

Authors

Kolin Nikolaj Georgievich

Merkurisov Denis Igorevich

Bojko Vladimir Mikhajlovich

Dates

2009-01-20—Published

2006-11-17—Filed