METHOD OF PREPARING UNIFORMLY ALLOYED SILICON monocrystals Russian patent published in 1997 - IPC

FIELD: crystal growing. SUBSTANCE: invention relates to growing monocrystals fit for semiconductor devices, in particular, for high-power and power transistors, power diodes, thyristors, etc. Invention allows higher yield of valid produce both when growing monocrystal silicon and when manufacturing semiconductor devices on its basis. This is achieved by applying partial alloying silicon with phosphorus when growing monocrystal and final alloying it to specified degree of electrical resistivity with thermal donors by way of annealing silicon at 300- 500 C in combination with temperature treatments when manufacturing device. In this case, content and distribution of donors caused by alloying with phosphorus as well as content and distribution of thermal donors are chosen such as summary concentration of donors in each silicon monocrystal point in manufactured devices to correspond specified electrical resistivity. EFFECT: increased yield of valid produce. 5 dwg