FIELD: chemistry.
SUBSTANCE: production method of tin-doped indium phosphide monocrystals includes as follows. Undoped indium phosphide monocrystal is exposed to entire reactor neutron spectrum, further heated, annealed and cooled. Heating and cooling are carried out at certain speed, while annealing is carried out at temperature specified by presented dependence.
EFFECT: possibility to produce tin-doped high-concentrated indium phosphide wafers, to improve uniformity of tin distribution and electron mobility.
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