VACUUM MICROTRIODE Russian patent published in 1997 - IPC

FIELD: electronic engineering; vacuum microelectronics; data display devices. SUBSTANCE: vacuum microtriode has substrate carrying strip anode and cathode electrodes separated by insulating layer with cells in the form of cuts made at intersection points of electrodes and in insulation; edge emitters of cathode electrodes are made inside cell cuts on opposite sides of cut along anode electrode above which they project. Anode electrodes are formed on substrate surface near cuts in insulating layer and are coated with phosphor; emitter edge of strip cathode electrode is provided with load resistor; strip cathode electrode surface is covered with second insulating layer with strip gate electrode surface made on its surface above strip anode electrode and along it; second insulating layer and strip gate electrode have cuts aligned with those of respective cells. EFFECT: reduced power requirement in transient operation of vacuum microtriode and improved brightness at low voltages. 6 cl, 3 dwg