FIELD EMISSION MICROTRIODE AND METHOD OF MANUFACTURE Russian patent published in 2009 - IPC H01J21/10 

FIELD: electronics.

SUBSTANCE: invention is referred to vacuum micro electronics and may be used for production of thin film integrated circuits. According to the invention, cathode electrode in field emission micro triode is mounted directly on the surface of substrate and comprised of a conductive structure and emitter area. The emitter area contains buffer resistive layer and emitter layer lying on the part of conductive structure surface. The emitter layer is provided with regular uniform emitter nano extensions made on the said layer surface. The nano extensions are built into the basis of the open-end nano holes of the first inter-electrode dielectric layer, which lies on the part of cathode electrode surface and over emitter area. The length of the first inter-electrode dielectric layer is limited by insulating pockets underlying control electrode. The said insulating pockets overlap the width of the control electrode and separate crossing area with cathode electrode from the rest of topological pattern of the control electrode. The second inter-electrode dielectric layer is represented as an ordered structure of nano porous anodic aluminium oxide. In addition, open-end nano channels are comprised of regular matrix of open-end pores.

EFFECT: improved quality of insulation and order of structure and reduced operating voltage, improved reliability and stability of field effect micro triode operation.

3 cl, 34 dwg