FIELD: electronics, vacuum integrated circuits as active element controlled by current, flat cathode-luminescent displays. SUBSTANCE: vacuum field-effect transistor comprises emitter, anode and gate positioned on substrate. Recess is made in substrate between edge of emitter and anode. Edge of emitter protrudes above recess. Gate is made on surface of emitter and forms Schottky barrier together with it. Besides, this gate can be positioned in parallel or at an angle with respect to edge of emitter. Anode can be produced in the form of strips arranged in parallel to edge of emitter. EFFECT: higher reliability; reduced energy consumption. 4 cl, 4 dwg
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